Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices
نویسندگان
چکیده
منابع مشابه
Sensitivity Analysis of the Effect of Pore Structure and Geometry on Petrophysical and Electrical Properties of Tight Media: Random Network Modeling
Several methodologies published in the literature can be used to construct realistic pore networks for simple rocks, whereas in complex pore geometry formations, as formed in tight reservoirs, such a construction still remains a challenge. A basic understanding of pore structure and topology is essential to overcome the challenges associated with the pore scale modeling of tight porous media. A...
متن کاملChalcogenide-Based Non-Volatile Memory Technology
– Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polycrystalline state that is highly reflective and low in resistance. The application of this commercially proven technology to create dense, high-speed, non-vol...
متن کاملOvshinsky Effect by Quantum Mechanics
Ovshinsky initiated scientific research in the field of amorphous and disordered materials that continues to this day. The Ovshinsky Effect where the resistance of thin GST films is significantly reduced upon the application of low voltage is of fundamental importance in phase-change random access memory (PC-RAM) devices.GST stands for GdSbTe chalcogenide type glasses.However, the Ovshinsky Eff...
متن کاملQuantitative measure of tetrahedral-sp3 geometries in amorphous phase-change alloys
Phase change or Ovonic memory technology has gained much interest in the past decade as a viable solution for the rapid increase in the demand for memory storage. This unique technology, first proposed by S. Ovshinsky in 1968, is based on storing information on the crystalline and amorphous phases of a material. The most common phase-change materials (PCMs) use chalcogenide alloys such as the G...
متن کاملModeling of SET seasoning effects in Phase Change Memory arrays
The experimental analysis of the electrical behavior of Phase Change Memory arrays evidenced a seasoning effect both on SET and RESET state. The previous modeling efforts on this issue were addressed only towards RESET operation. This work presents a SET seasoning model implemented within a numerical simulator starting from the extraction of the characteristic erase operation kinetic parameters...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015